Self-implantation energy and dose effects on Ge solid-phase epitaxial growth

The effects of implantation energy and dose on Ge solid-phase epitaxial growth kinetics were studied using (0 0 1) Ge substrates self-implanted at energies of 20–150 keV and doses of 1 ! 10"2 ! 10 cm"2. All implants produced a continuous amorphous layer, which was crystallized by annealing at 330 !C for 22–176 min. At lower doses, the growth velocity was implant energy-independent while at higher doses the growth rate tended to decrease with decreasing implant energy. The decrease in growth velocity with energy at higher doses is discussed in terms of possible implantation-induced stresses altering growth kinetics. Published by Elsevier B.V.